AlGaN/GaN HEMTs-an overview of device operation and applications

20022,182 citationsJournal Article

Authors

Umesh K. Mishra · University of California, Santa Barbara

Abstract

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

Topics & Keywords

GaN-based semiconductor devices and materials Radio Frequency Integrated Circuit Design Silicon Carbide Semiconductor Technologies

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Proceedings of the IEEE

Volume 90, Issue 6, pp. 1022-1031

DOI: 10.1109/jproc.2002.1021567

Field-Weighted Citation Impact: 26.08