21.1: <i>Invited Paper</i> : High Throughput MOTFT with Organic Etch‐Stopper and SiNx Gate Insulator

Metal‐oxide TFT (MOTFT) is promising for next generation high information content displays for both portable and TV/monitor applications. With current manufacturing capacity established originally for a‐Si TFT, it would be ideal to develop a MOTFT structure and process most compatible with the equipment available on existing a‐Si TFT line with minimal upgrade and corresponding capital investment. With such intention, we have developed bottom‐gate, top‐source/drain MOTFT with photopatternable organic etch‐stopper (ES) with performance meeting product specifications. Backplane with such MOTFT can be made with same mask counts as that with BCE process.