Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

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Authors

Hiroyasu Nakayama · Tohoku University

Matthias Althammer · Bavarian Academy of Sciences and Humanities

Y.-T. Chen · Delft University of Technology

Ken‐ichi Uchida · Tohoku University

Y. Kajiwara · Tohoku University

Daisuke Kikuchi · Tohoku University

T. Ohtani ·

Abstract

We report anisotropic magnetoresistance in Pt|Y(3)Fe(5)O(12) bilayers. In spite of Y(3)Fe(5)O(12) being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y(3)Fe(5)O(12), excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance."

Topics & Keywords

Magnetic properties of thin films Magnetic Properties and Applications Magneto-Optical Properties and Applications

Publication Details

Published in: Physical Review Letters

Volume 110, Issue 20, pp. 206601-206601

DOI: 10.1103/physrevlett.110.206601

Field-Weighted Citation Impact: 51.06

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Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

Authors

Abstract

Topics & Keywords

Publication Details