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Nitrogen (N<sub>2</sub>) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films
1999
6 citations
Journal Article
Field-Weighted Citation Impact:
2.80
Nitrogen (N<sub>2</sub>) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films | Researchclopedia
·
The University of Texas at Austin
Mark Gardner
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Advanced Micro Devices (United States)
Mark Gilmer
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Advanced Micro Devices (United States)