A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses

In this paper, a new di/dt control gate drive circuit for IGBT devices is proposed. By this circuit, the switching performances of IGBT such as dv/dt, di/dt, surge voltage and also switching losses are reduced. This scheme can also eliminate a snubber circuit from the inverter system. From experimental tests, the EMI noise level is reduced by more than 15 dBuV/m as compared with conventional systems.