High power AlGaN ultraviolet light emitters

2014172 citationsJournal Article

Authors

Max Shatalov · Sensor Electronic Technology (United States)

Wenhong Sun · Sensor Electronic Technology (United States)

Rakesh Jain · Sensor Electronic Technology (United States)

A. V. Lunev · Sensor Electronic Technology (United States)

X. Hu · Sensor Electronic Technology (United States)

Alex Dobrinsky · Sensor Electronic Technology (United States)

Yuri Bilenko

Abstract

We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.

Topics & Keywords

GaN-based semiconductor devices and materials Photocathodes and Microchannel Plates Ga2O3 and related materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Semiconductor Science and Technology

Volume 29, Issue 8, pp. 084007-084007

DOI: 10.1088/0268-1242/29/8/084007

Field-Weighted Citation Impact: 18.37