Negative-resistance diode power amplification

197057 citationsJournal Article

Authors

M.E. Hines · Microwave Medical Systems (United States)

Abstract

An analysis is presented for the nonlinear behavior of power amplifiers utilizing negative-resistance diodes in a reflection circuit. The analysis applies to both stable and locked-oscillator modes of operation. Special emphasis is given to a simple model involving a cubic nonlinearity in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I-V</tex> relationship, and to the idealized LSA device in an amplification mode.

Topics & Keywords

Semiconductor Quantum Structures and Devices Radio Frequency Integrated Circuit Design GaN-based semiconductor devices and materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Transactions on Electron Devices

Volume 17, Issue 1, pp. 1-8

DOI: 10.1109/t-ed.1970.16916

Field-Weighted Citation Impact: 6.71