Bipolar - JFET - MOSFET negative resistance devices

A systematic method is given for generating negative-resistance circuits made of 2 transistors and linear positive resistors only. The 2 transistors may be bioolar ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n-p-n</tex> or <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p-n-p</tex> ), <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">JFET</tex> ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -channel or p-channel), <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MOSFET</tex> ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> -channel or <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</tex> -channel), or their combinations. Since the circuits do not require an internal power supply, they are passive and can be integrated as a two-terminal device in monolithic form. Two algorithms are given for generating a negative-resistance device which exhibits either a type- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</tex> <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\upsilon - i</tex> characteristic similar to that of a tunnel diode, or a type- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</tex> <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\upsilon -i</tex> characteristic similar to that of a four-layered <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p-n-p-n</tex> diode. Hundreds of new and potentially useful negative resistance devices have been discovered. A selected catalog of many such prototype negative-resistance devices is included for future applications.