Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodes

199023 citationsJournal Article

Authors

H. J. Ziock · Los Alamos National Laboratory

C M Hoffman · Los Alamos National Laboratory

D. B. Holtkamp · Los Alamos National Laboratory

W.W. Kinnison · Los Alamos National Laboratory

C. Milner · Los Alamos National Laboratory

W.F. Sommer · Los Alamos National Laboratory

J. Bacigalupi

Abstract

As part of a program to develop a silicon tracking device for the Superconducting Super Collider (SSC), radiation-hard CMOS transistors and p-i-n diodes have been exposed to the 800-MeV LAMPF (Los Alamos Meson Physics Facility) proton beam. The fluences accumulated in one week corresponded to the expected radiation levels of about ten SSC years. The leakage current constants for p-i-n diodes and threshold voltage shifts for CMOS transistors are determined under different biasing conditions. The results are presented and examined in detail.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Topics & Keywords

Radiation Effects in Electronics Radiation Detection and Scintillator Technologies Radiation Shielding Materials Analysis

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Transactions on Nuclear Science

Volume 37, Issue 3, pp. 1238-1241

DOI: 10.1109/23.57372

Field-Weighted Citation Impact: 3.59