Investigation of Frenkel defects in electron irradiated copper by Huang scattering of X-rays. I. Results for single interstitials

The diffuse scattering of X-rays (CuKalpha 1) and the change of the electrical resistivity has been investigated at single crystals of copper after low temperature electron irradiation (defect concentrations between 3 and 6*10-4). The X-ray measurements were made near the (200), (400), and (220) Bragg reflections in directions parallel and perpendicular to the scattering vector. The data taken immediately after the irradiation showed all the characteristic features predicted by the theory for scattering from point defects with weak displacement fields (Huang scattering).