A high gain broadband LNA in GaAs 0.15-μm pHEMT process using inductive feedback gain compensation for radio astronomy applications

A broadband, high gain low noise amplifier (LNA) for radio astronomy application is developed. This work is implemented using 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. An inductive feedback gain compensation topology is applied for broadband design. This LNA shows small signal gain 34.3 dB from 3.2 to 14.7 GHz with 0.8-dB gain variation from 4.6 to 13.8 GHz and a dc consumption 45 mW. It demonstrates a measured noise figure between 1.3 and 1.6 dB from 4.6 to 13.8 GHz.