Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS<sub>2</sub> Atomic Layers on Mica Substrate

2016190 citationsJournal Article

Authors

Fangfang Cui · Shaanxi Normal University

Cong Wang · Shaanxi Normal University

Xiaobo Li · Shaanxi Normal University

Gang Wang · Shaanxi Normal University

Kaiqiang Liu · Shaanxi Normal University

Zhou Yang · Shaanxi Normal University

Qingliang Feng ·

Abstract

Anisotropic 2D layered material rhenium disulfide (ReS2 ) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460-900 °C with high efficiency.

Topics & Keywords

2D Materials and Applications Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties

Publication Details

Published in: Advanced Materials

Volume 28, Issue 25, pp. 5019-5024

DOI: 10.1002/adma.201600722

Field-Weighted Citation Impact: 13.79

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Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS<sub>2</sub> Atomic Layers on Mica Substrate

Authors

Abstract

Topics & Keywords

Publication Details