Beam loss induced electrical stress test on CMS silicon strip detectors

Based on simulated beam loss scenarios at LHC, fully depleted CMS silicon strip detectors and sensors were exposed to 42 ns long beam spills with 10 protons per spill at PS at CERN. This high ionising dose is sufficient to shortcircuit the silicon sensors. The dynamic behaviour of bias voltage, leakage currents and voltage drop over coupling capacitors had been monitored during the impact. The results of preand postqualification as well as the dynamic behaviour will be presented.