Ion-implanted capacitively coupled double sided silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

Silicon strip detectors with double-sided readout have been designed and processed on 100-mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements. A detector with VLSI readout electronics was measured in a test beam. Test beam measurements show signal over noise ratios of 39 on the detector p-side and 26 on the n-side.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>