Development of FD-SOI monolithic pixel devices for high-energy charged particle detection

Monolithic pixel devices fabricated with a silicon-on-Insulator (SOI) technology are excellent candidates to realize particle detectors of fast response and least material yet simple in fabrication. In our SOI pixel devices the sensitive part is the “handle” wafer, to which we examined high resistive FZ wafers of both p- and n-types together with CZ wafer of n-type. Full depletion of the FZ wafers is easily achievable for typical thicknesses of 260 to 500 μm. We thinned these devices to 100 to 50 μm. The response was evaluated with infrared and red lasers, and in a high energy beam. Irradiation to <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co γ was carried out to verify the radiation tolerance of the devices.