Low resistance (~10 -6 Ωcm 2 )ohmic contact to n -GaAs processed at 175°C

19955 citationsJournal Article

Authors

Abstract

A low resistance (10-6 Ωcm2) Au/Ge/Pd ohmic contact processed at 175°C has been developed to n-GaAs (n ≃ 1018 cm-3). The ohmic contact formation mechanism can be rationalised in terms of the solid phase regrowth (SPR) principle and the interdiffusion of Au and Ge.

Topics & Keywords

Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices Integrated Circuits and Semiconductor Failure Analysis

Publication Details

Published in: Electronics Letters

Volume 31, Issue 13, pp. 1106-1108

DOI: 10.1049/el:19950704

Field-Weighted Citation Impact: 0.75

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Low resistance (~10 <sup>-6</sup> Ωcm <sup>2</sup> )ohmic contact to <i>n</i> -GaAs processed at 175°C

Authors

Abstract

Topics & Keywords

Publication Details