Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs

20160 citationsJournal Article

Authors

Julien Madéo · Okinawa Institute of Science and Technology Graduate University

Athanasios Margiolakis · Okinawa Institute of Science and Technology Graduate University

Zhenyu Zhao · Shanghai Normal University

P. J. Hale · Okinawa Institute of Science and Technology Graduate University

Michael K. L. Man · Okinawa Institute of Science and Technology Graduate University

Qinglin Zhao · Shanghai Institute of Optics and Fine Mechanics

Abstract

We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.

Topics & Keywords

Terahertz technology and applications Photonic and Optical Devices Semiconductor Quantum Structures and Devices

Publication Details

DOI: 10.1109/piers.2016.7734980

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Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs

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Abstract

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