6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process

This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first circuit is a 27-34 GHz power amplifier, presenting 6 W of output power in pulsed operation and 5.6 W in CW operation. The second circuit, using exactly the same process, is a 8-12 GHz Low Noise Amplifier presenting 1.3 dB noise figure from 11 to 13 GHz.