New silicon photodiodes for detection of the 1064nm wavelength radiation

20161 citationsJournal Article

Authors

M. Węgrzecki · Institute of Electron Technology

Tadeusz Piotrowski · Institute of Electron Technology

Zbigniew Puzewicz · Telesystem (Poland)

Jan Bar · Institute of Electron Technology

Ryszard Czarnota · Telesystem (Poland)

Rafał Dobrowolski · Institute of Electron Technology

A. I. Klimov

Abstract

In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

Topics & Keywords

Photonic and Optical Devices Calibration and Measurement Techniques CCD and CMOS Imaging Sensors

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Volume 10175, pp. 101750Y-101750Y

DOI: 10.1117/12.2257557

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