Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates

In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process.