Fundamental variability limits of filament-based RRAM

2016133 citationsJournal Article

Authors

Alessandro Grossi · CEA Grenoble

E. Nowak · Laboratoire d'Électronique des Technologies de l'Information

Cristian Zambelli · University of Ferrara

C. Pellissier · Laboratoire d'Électronique des Technologies de l'Information

S. Bernasconi · Laboratoire d'Électronique des Technologies de l'Information

G. Cibrario · Laboratoire d'Électronique des Technologies de l'Information

Abstract

While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are presented allowing the quantification of the intrinsic variability factors. As a result, the fundamental variability limits of filament-based RRAM in the full resistance range are identified.

Topics & Keywords

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices

Publication Details

DOI: 10.1109/iedm.2016.7838348

Field-Weighted Citation Impact: 6.52

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Fundamental variability limits of filament-based RRAM

Authors

Abstract

Topics & Keywords

Publication Details