Hydrogen incorporation effect in phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

201714 citationsJournal Articlegold Open Access

Authors

R. Navamathavan · Vellore Institute of Technology University

Abstract

We report on the influence of hydrogen incorporation on the conductivity of phosphorous (P) doped ZnO thin films grown by using radio-frequency (RF) magnetron sputtering.

Topics & Keywords

ZnO doping and properties Gas Sensing Nanomaterials and Sensors Perovskite Materials and Applications

Publication Details

Published in: RSC Advances

Volume 7, Issue 26, pp. 16119-16125

DOI: 10.1039/c7ra00759k

Field-Weighted Citation Impact: 1.00

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Hydrogen incorporation effect in phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Authors

Abstract

Topics & Keywords

Publication Details