Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells

Efficient optimization of the boron-doped region of silicon solar cells requires reliable process simulation of boron tube diffusion. Established simulation models and parameters are mostly calibrated for complementary metal oxide semiconductor device fabrication, where the doping processes are significantly different from those used in solar cell fabrication. In this paper, we present models and a set of corresponding parameters that are suitable for process simulation of BBr3 tube diffusion for solar cell applications with Sentaurus TCAD. Experimental doping profiles obtained with a wide range of diffusion recipes are compared with simulation results. Additionally, with the process parameter sensitivity analysis, we demonstrate the dominant process parameters that alter the boron distribution profile and its effect on the electrical performance.