The electronic band structure of Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub>in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect | Researchclopedia
The electronic band structure of Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub>in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect