Development and Characterization of AlOx/SiNx :B Layer Systems for Surface Passivation and Local Laser Doping

This work aims to improve the rear-side properties of p-type monocrystalline silicon solar cells by using the passivated emitter and rear locally diffused (PERL) solar cell concept. To realize the rear side structure, the so-called PassDop approach was used combining both surface passivation and local doping. The concept utilizes a multifunctional, doped AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> :B layer stack; the localized structuring is achieved by local contact opening and doping by a laser process. Using AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> :B PassDop layers, an outstanding effective surface recombination velocity S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> of less than 4 cm/s was achieved after firing at the passivated area. The boron concentration in the PassDop layers did not show any significant influence on S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> . Laser doping resulted in highly doped regions in the silicon with a sheet resistance of below 20 Ω/sq and surface doping concentrations close to 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . Accordingly, calculations showed that the saturation current density at the laser doped areas can be as low as 900 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for line-shaped contact structures.