Development of a silicon bulk radiation damage model for Sentaurus TCAD

201723 citationsJournal Articlehybrid Open Access

Authors

Åsmund Folkestad · European Organization for Nuclear Research

K. Carvalho Akiba · Universidade Federal do Rio de Janeiro

M. van Beuzekom · National Institute for Subatomic Physics

E. Buchanan · University of Bristol

P. Collins · European Organization for Nuclear Research

E. Dall’Occo · National Institute for Subatomic Physics

A. Di Canto

Abstract

This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2.

Topics & Keywords

Particle Detector Development and Performance Radiation Effects in Electronics Silicon and Solar Cell Technologies

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Volume 874, pp. 94-102

DOI: 10.1016/j.nima.2017.08.042

Field-Weighted Citation Impact: 0.51