Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

2017352 citationsJournal Article

Authors

Peigang Li · Zhejiang Sci-Tech University

Haoze Shi · Zhejiang Sci-Tech University

Kai Chen · Zhejiang Sci-Tech University

Daoyou Guo · Zhejiang Sci-Tech University

Wei Cui · Beijing University of Posts and Telecommunications

Yusong Zhi · Beijing University of Posts and Telecommunications

Shunli Wang

Abstract

A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W−1) was fabricated by constructing p–n junction of GaN/Ga2O3 films.

Topics & Keywords

Publication Details

Published in: Journal of Materials Chemistry C

Volume 5, Issue 40, pp. 10562-10570

DOI: 10.1039/c7tc03746e

Field-Weighted Citation Impact: 8.10

Command Palette

Construction of GaN/Ga<sub>2</sub>O<sub>3</sub> p–n junction for an extremely high responsivity self-powered UV photodetector

Authors

Abstract

Topics & Keywords

Publication Details