Exceptional Thermoelectric Properties of Layered GeAs₂

Using semiclassical Boltzmann transport theory and density functional formalism, we have systematically studied the thermoelectric performance of layered GeAs2. The figure of merit, ZT value, of this layered structure is found to be 2.78 along the out-of-plane direction, with optimal carrier concentration at 800 K. Analysis of the charge density difference and phonon transport properties allows us to attribute such exceptional thermoelectric properties to strong interlayer interaction between the adjacent layers where quasicovalent bonding is responsible for the enhanced electrical conductivity, while the layered structure accounts for the suppressed lattice thermal conductivity. This study highlights the potential of layered crystals for highly efficient thermoelectric materials.