Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Abstract p‐Type and n‐type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High‐performance OTFTs are fabricated using these electrodes and printed p‐type and n‐type organic semiconductors, each achieving a mobility of 0.2 cm 2 V −1 s −1 at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse offset printing. The inverter circuits successfully operate at a supply voltage as low as 2.5 V with a high signal gain of 14. These results are expected to contribute greatly to the development of integrated circuits with high‐speed operation using OTFTs.