Extremely low trap-state energy level perovskite solar cells passivated using NH<sub>2</sub>-POSS with improved efficiency and stability

201851 citationsJournal Article

Authors

Na Liu · Beijing Institute of Technology

Qin Du · Beijing Institute of Technology

Guang‐Zhong Yin · Peking University

Pengfei Liu · Beijing Institute of Technology

Liang Li · Peking University

Haipeng Xie · Supermicro (United States)

Cheng Zhu ·

Abstract

The defects at perovskite film surface could be passivated effectively using a derivative of polyhedral oligomeric silsesquioxane with an amino-group (NH<sub>2</sub>-POSS). The extremely low trap-state energy level (0.045 eV) was obtained by temperature-dependent admittance measurements. Both stability and efficiency in devices have been approved.

Topics & Keywords

Perovskite Materials and Applications Chalcogenide Semiconductor Thin Films Conducting polymers and applications

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Journal of Materials Chemistry A

Volume 6, Issue 16, pp. 6806-6814

DOI: 10.1039/c7ta11345e

Field-Weighted Citation Impact: 4.12