880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

201892 citationsJournal Article

Authors

Dong Ji · University of California, Davis

Anchal Agarwal · University of California, Santa Barbara

Haoran Li · University of California, Santa Barbara

Wenwen Li · University of California, Davis

S. Keller · University of California, Santa Barbara

Srabanti Chowdhury · University of California, Davis

Abstract

In this letter, we report a high-voltage metalinsulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si 3 N 4 as the gate dielectric. The device had a high breakdown voltage of 880 V and a low R on,sp of 2.7 mQ·cm 2 . A low hysteresis of ~0.1 V was observed due to the high quality of the in situ Si 3 N 4 .

Topics & Keywords

GaN-based semiconductor devices and materials Semiconductor materials and devices Ga2O3 and related materials

Publication Details

Published in: IEEE Electron Device Letters

Volume 39, Issue 6, pp. 863-865

DOI: 10.1109/led.2018.2828844

Field-Weighted Citation Impact: 8.37

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880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

Authors

Abstract

Topics & Keywords

Publication Details