Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films

201860 citationsJournal Article

Authors

Việt Hương Nguyễn · Institut polytechnique de Grenoble

U. Gottlieb · Institut polytechnique de Grenoble

A. Valla · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

D. Muñoz · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Daniel Bellet · Institut polytechnique de Grenoble

David Muñoz‐Rojas · Institut polytechnique de Grenoble

Abstract

A new model is presented to describe charge scattering at grain boundaries in degenerately doped polycrystalline semiconductors such as transparent conductive oxides.

Topics & Keywords

ZnO doping and properties Electronic and Structural Properties of Oxides Copper-based nanomaterials and applications

Publication Details

Published in: Materials Horizons

Volume 5, Issue 4, pp. 715-726

DOI: 10.1039/c8mh00402a

Field-Weighted Citation Impact: 3.06

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Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films

Authors

Abstract

Topics & Keywords

Publication Details