A 1300 mm² Ultrahigh‐Performance Digital Imaging Assembly using High‐Quality Perovskite Single Crystals

By fine-tuning the crystal nucleation and growth process, a low-temperature-gradient crystallization method is developed to fabricate high-quality perovskite CH₃ NH₃ PbBr₃ single crystals with high carrier mobility of 81 ± 5 cm² V^-1 s^-1 (>3 times larger than their thin film counterpart), long carrier lifetime of 899 ± 127 ns (>5 times larger than their thin film counterpart), and ultralow trap state density of 6.2 ± 2.7 × 10⁹ cm^-3 (even four orders of magnitude lower than that of single-crystalline silicon wafers). In fact, they are better than perovskite single crystals reported in prior work: their application in photosensors gives superior detectivity as high as 6 × 10¹³ Jones, ≈10-100 times better than commercial sensors made of silicon and InGaAs. Meanwhile, the response speed is as fast as 40 µs, ≈3 orders of magnitude faster than their thin film devices. A large-area (≈1300 mm² ) imaging assembly composed of a 729-pixel sensor array is further designed and constructed, showing excellent imaging capability thanks to its superior quality and uniformity. This opens a new possibility to use the high-quality perovskite single-crystal-based devices for more advanced imaging sensors.