Die Level Sensor Integration in SiC Power Modules

Giant magnetoresistive (GMR) detectors have been integrated in terminals of 2-in-1 Si IGBT modules for galvanically isolated current sensing. This work integrates GMRs into the region directly adjacent to the die of SiC MOSFET modules. A fully integrated, ultra-low noise sensing system with a bandwidth of 2 MHz is developed. The Cu layers in the DBC substrate influence the near die magnetic field. This field is analyzed and field differentiation is developed to extend the flat bandwidth (FBW). FEA and experimental results of the developed sensing methodologies are presented. The die level sensor integration is crucial for compact EV applications.