Bi2OS2: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states

201856 citationsJournal Article

Authors

Xiwen Zhang · Department of Physics, Mathematics and Informatics

Bing Wang · Southeast University

Xianghong Niu · Nanjing Library

Yunhai Li · Southeast University

Yunfei Chen · Saskatchewan Seniors Mechanism

Jinlan Wang · Southeast University

Abstract

Bi2OS2 nanosheets possess tunable anomalous layer-dependent bandgaps, derived from the synergetic effect of the quantum confinement and surface electron states.

Topics & Keywords

Electronic and Structural Properties of Oxides Advanced Photocatalysis Techniques 2D Materials and Applications

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Materials Horizons

Volume 5, Issue 6, pp. 1058-1064

DOI: 10.1039/c8mh01001c

Field-Weighted Citation Impact: 2.86

Command Palette

Bi<sub>2</sub>OS<sub>2</sub>: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states

Authors

Abstract

Topics & Keywords

UN Sustainable Development Goals

Publication Details