Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

201832 citationsJournal Article

Authors

V. Ya. Aleshkin · Institute for Physics of Microstructures

А. А. Дубинов · Institute for Physics of Microstructures

V. V. Rumyantsev · Institute for Physics of Microstructures

M. A. Fadeev · Institute for Physics of Microstructures

О.Л. Домнина · Volga State University of Water Transport

Н. Н. Михайлов · Novosibirsk State University

S. A. Dvoretsky

Abstract

Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.

Topics & Keywords

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Solid State Laser Technologies

Publication Details

Published in: Journal of Physics Condensed Matter

Volume 30, Issue 49, pp. 495301-495301

DOI: 10.1088/1361-648x/aaebf5

Field-Weighted Citation Impact: 1.69

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Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

Authors

Abstract

Topics & Keywords

Publication Details