Investigation of Statistical Broadening in InGaN Alloys

201819 citationsJournal Articlediamond Open Access

Authors

D S Arteev · Ioffe Institute

A. V. Sakharov · Ioffe Institute

E. E. Zavarin · Ioffe Institute

W. V. Lundin · Ioffe Institute

A. N. Smirnov · Ioffe Institute

V. Yu. Davydov · Ioffe Institute

M. A. Yagovkina · Ioffe Institute

Abstract

Optical and structural properties of thick InGaN layers grown by MOCVD and MBE were studied by photoluminescence, optical transmission and Raman spectroscopies and X-ray diffraction analysis. Optical bandgap, Urbach energy, and full widths at half maximum (FWHM) of photoluminescence and Raman spectra depending on the InGaN alloy composition were determined experimentally. Minimal theoretical linewidth of photoluminescence spectra resulted from random distribution of In and Ga atoms in cation sublattice was calculated.

Topics & Keywords

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Acoustic Wave Resonator Technologies

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Journal of Physics Conference Series

Volume 1135, pp. 012050-012050

DOI: 10.1088/1742-6596/1135/1/012050

Field-Weighted Citation Impact: 0.91