Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector

We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20–40 GHz to 0.165–0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W−1 and noise equivalent power (NEP) of 0.38 at 20–40 GHz, and achieved a responsivity of 3.3 kV W−1 and NEP of 5.7 at 0.165–0.173 THz; moreover, a short response time ∼810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays.