Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

Abstract Indium gallium zinc oxide (IGZO) is deposited using plasma‐enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high‐performing and stable coplanar top‐gate self‐aligned (SA) thin‐film transistors (TFTs). The integration of a sALD‐deposited aluminum oxide buffer layer into the TFT stack further improves uniformity and stability. The results demonstrate the viability of atmospheric sALD as a novel deposition technique for the flat‐panel display industry.