Reliability of an Al₂O₃/SiO₂MIM Capacitor for 180nm (3.3V) Technology

Metal-Insulator-Metal (MIM) capacitors are widely used in More-than-Moore technologies, such as RF devices and image sensors. These technologies typically use SiN for the MIM capacitor dielectric, which has good reliability but a relatively low capacitance density. In this report we examine the reliability and performance tradeoffs for a MIM capacitors based on an Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> / SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectrics.