A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

2019134 citationsJournal Articlebronze Open Access

Authors

Maris Bauer · Goethe University Frankfurt

Adam Rämer · Ferdinand-Braun-Institut

Serguei Chevtchenko · Ferdinand-Braun-Institut

K. Yu. Osipov · Ferdinand-Braun-Institut

Dovilė Čibiraitė · Goethe University Frankfurt

Sandra Pralgauskaitė · Vilnius University

Kȩstutis Ikamas ·

Abstract

Many emerging applications in the terahertz (THz) frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz detection (TeraFETs) have proven to meet these requirements, at the same time offering great potential for scalability, high-speed operation, and functional integrability.

Topics & Keywords

Terahertz technology and applications Superconducting and THz Device Technology GaN-based semiconductor devices and materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Transactions on Terahertz Science and Technology

Volume 9, Issue 4, pp. 430-444

DOI: 10.1109/tthz.2019.2917782

Field-Weighted Citation Impact: 7.87