Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

20191 citationsJournal Article

Authors

Lai MingRui · Institute of High Performance Computing

H. Ramanarayan · National University of Singapore

Khoong Hong Khoo · National University of Singapore

Hongmei Jin · National University of Singapore

Shunnian Wu · National University of Singapore

Chaitanya Joshi · National University of Singapore

K. R. Mangipudi

Abstract

We present a kinetic Monte Carlo (KMC) model for the electroplating of through silicon vias. The KMC model includes the chemical and transport properties of the copper ions, suppressors and accelerators in the electrolyte. We have used density functional theory calculations to get the relative values of the barriers for the additives. We present the results obtained from the KMc simulations for different aspect ratios and nucleation barriers.

Topics & Keywords

Electrodeposition and Electroless Coatings Semiconductor materials and interfaces Molecular Junctions and Nanostructures

Publication Details

Published in: 2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Volume 100, pp. 342-344

DOI: 10.1109/edtm.2019.8731250

Field-Weighted Citation Impact: 0.61

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Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

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Abstract

Topics & Keywords

Publication Details