Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening

2015274 citationsJournal Article

Authors

Zhihao Yu · Collaborative Innovation Center of Advanced Microstructures

Zhun‐Yong Ong · Institute of High Performance Computing

Yiming Pan · Collaborative Innovation Center of Advanced Microstructures

Yang Cui · Collaborative Innovation Center of Advanced Microstructures

Run Xin · Collaborative Innovation Center of Advanced Microstructures

Yi Shi · Collaborative Innovation Center of Advanced Microstructures

Abstract

By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.

Topics & Keywords

2D Materials and Applications Graphene research and applications Nanowire Synthesis and Applications

Publication Details

Published in: Advanced Materials

Volume 28, Issue 3, pp. 547-552

DOI: 10.1002/adma.201503033

Field-Weighted Citation Impact: 9.10

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Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening

Authors

Abstract

Topics & Keywords

Publication Details