Fast transient thermomechanical stress to set a pressure-assisted sintering process

High temperature application and long term reliability are the future trends for power electronics. A key factor to enable future applications is the interconnection durability improvement under high temperature and thermo-mechanical cycling loads. Nowadays, the standard solders cannot fulfill the reliability requirements of future power electronic devices, therefore interconnection technologies have to be developed. One of the most promising joining technique is Ag sintering. Combining properly temperature, time and pressure, a strong, highly electrically and thermally conductive bond is formed. The aim of this work is to develop a methodology to assess the Ag sintering die attach process for a SiC power MOSFET. Different process parameters have been benchmarked by means of physical analyses, performed not only on just assembled devices but also considering the aging effect induced by a liquid-to-liquid thermal shock test.