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Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

201962 citationsJournal Articlegreen Open Access

Authors

Jordan Bouaziz · Université Claude Bernard Lyon 1

Pédro Rojo Romeo · Université Claude Bernard Lyon 1

Nicolas Baboux · Université Claude Bernard Lyon 1

Bertrand Vilquin · Université Claude Bernard Lyon 1

Abstract

International audience

Topics & Keywords

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Advanced Memory and Neural Computing

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: ACS Applied Electronic Materials

Volume 1, Issue 9, pp. 1740-1745

DOI: 10.1021/acsaelm.9b00367

Field-Weighted Citation Impact: 2.65

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films | Researchclopedia