The role of traps in the photocurrent generation mechanism in thin InSe photodetectors

2019266 citationsJournal Articlehybrid Open Access

Authors

Qinghua Zhao · Northwestern Polytechnical University

Wei Wang · Northwestern Polytechnical University

Félix Carrascoso · Instituto de Ciencia de Materiales de Madrid

Wanqi Jie · Northwestern Polytechnical University

Tao Wang · Northwestern Polytechnical University

Andrés Castellanos-Gómez · Instituto de Ciencia de Materiales de Madrid

Riccardo Frisenda

Abstract

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials.

Topics & Keywords

2D Materials and Applications Perovskite Materials and Applications Chalcogenide Semiconductor Thin Films

Publication Details

Published in: Materials Horizons

Volume 7, Issue 1, pp. 252-262

DOI: 10.1039/c9mh01020c

Field-Weighted Citation Impact: 10.60

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The role of traps in the photocurrent generation mechanism in thin InSe photodetectors

Authors

Abstract

Topics & Keywords

Publication Details