Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

202058 citationsJournal Article

Authors

Xiaobing Yan · National University of Singapore

Gang Cao · Advanced Materials and Devices (United States)

Jingjuan Wang · Advanced Materials and Devices (United States)

Menghua Man · Shijiazhuang University

Jianhui Zhao · Advanced Materials and Devices (United States)

Zhenyu Zhou · Advanced Materials and Devices (United States)

Hong Wang

Abstract

The Ta/Ta<sub>2</sub>O<sub>5</sub>/AlN/graphene memristor with silicon-based multilayer graphene films as the bottom electrode has stable electrical characteristics.

Topics & Keywords

Advanced Memory and Neural Computing Neuroscience and Neural Engineering Ferroelectric and Negative Capacitance Devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Journal of Materials Chemistry C

Volume 8, Issue 14, pp. 4926-4933

DOI: 10.1039/d0tc00316f

Field-Weighted Citation Impact: 2.59