Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

202036 citationsJournal Articlebronze Open Access

Authors

Shu An · Nanyang Technological University

Shaoteng Wu · Nanyang Technological University

Chuan Seng Tan · Nanyang Technological University

Guo‐En Chang · National Chung Cheng University

Xiao Gong · National University of Singapore

Munho Kim · Nanyang Technological University

Abstract

We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties.

Topics & Keywords

Photonic and Optical Devices Nanowire Synthesis and Applications Advanced Fiber Optic Sensors

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Journal of Materials Chemistry C

Volume 8, Issue 39, pp. 13557-13562

DOI: 10.1039/d0tc03016c

Field-Weighted Citation Impact: 2.49