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The area of ferroelectric thin films has expanded rapidly recently with the advent of high quality multi-oxide deposition technology. Advances in thin film quality has resulted in the realization of new technologies not achievable through classical bulk ceramic processing techniques. An example of this progress is the co-processing of ferroelectric thin films with standard semiconductor silicon and GaAs integrated circuits for radiation hard, non-volatile memory products. While the development of this class of products is still embryonic, the forecasted market potential is rapidly out distancing the combined developmental effort. Historically the greatest use of bulk ferroelectric material has been in sensor technology, utilizing the pyroelectric and piezoelectric properties of the material. By comparison, a relatively small development effort has been reported for ferroelectric thin film senor technology, a field sure to provide exciting advances in the future. The papers in this proceedings volume were presented at the first symposium dedicated to the field of ferroelectric thin films held by the Materials Research Society at the Spring 1990 Meeting in San Francisco, CA, April 16-20, 1990. The symposium was designed to provide a comprehensive tutorial covering the newest advances of ferroelectric thin films, including material systems, new deposition techniques and physical,more » electrical and electro-optic characterization.« less