Self-turn-on-free 1200V scaled CSTBT™ driven by 5V gate voltage with wide SOA

Scaled IGBT for 5V gate voltage operation is a key technology to reduce the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEsat</sub> and the driver power consumption. In this paper, we experimentally demonstrate a self-turn-on free 1200V scaled CSTBT™ driven by 5V gate voltage. By using narrow mesa and fine n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -emitter pattern, low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEsat</sub> and wide SOA was obtained. Also, high self-turn-on immunity even without negative gate bias was achieved owing to low C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">res</sub> /C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ies</sub> ratio.